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Malin Nilsson

Position:    PhD Student

E-mail:    malin.nilsson@ftf.lth.se
Phone:    +46 46 22 23917
Cell phone:   
Room:    Q139
Address:    Box 118
221 00 Lund
      Sweden

University:    Lunnd University
Division:    Solid State Physics
Research Area(s):    Materials Science
Quantum Physics
Nanoelectronics- & photonics
Interests:   

 
malin.nilsson
Advisors:                   Claes Thelander
                                  Martin Leijnse
                                  Heiner Linke

My research:

Charge and spin transport in parallel-coupled quantum dots in nanowires

We use quantum dots (QDs) formed by crystal-phase tuning during epitaxial growth of InAs nanowires as a starting point to realize and electrically characterize two different types of parallel-coupled quantum dots; electron-hole QDs and electron-electron QDs. In the InAs nanowire, two thin segments of wurtzite (WZ) in otherwise zinc blende (ZB) crystal structure act as tunnel barriers (~100 meV) for electron transport and define the QD in the axial dimension [1]. The axial extension of the QD can be tuned to less than 10 nm, which leads to a strong quantum confinement and enables the QD to be fully depleted of electrons, see Fig 1(a).

In few-electron InAs QDs, pairs of local side gates and a global back gate are used to reproducibly tune system from one QD into parallel double QDs, for which we can control the populations down to the last electrons. The combination of hard-wall barriers to source and drain, shallow inter-dot tunnel barriers, and very high single-particle excitation energies (up to 27 meV), allow an order of magnitude tuning of the strength for the first intramolecular bond. In addition, the large |g*|-factor (~9) facilitate detailed studies of the magnetic-field dependency of the one- and two-electron states.

Parallel electron-hole core-shell QDs can be realized by using the InAs nanowire QD as a template for selective radial growth of GaSb on the ZB crystal phase. [2,3] As a heterostructure in bulk, InAs and GaSb form a broken band-gap alignment with spatially separated electrons and holes. In QDs, the overlap of the InAs conduction band and GaSb valence band can be tuned, which is of interest in studies of electron-hole interactions and transport via hybridized states. The electrical measurements of devices in the many-electron/hole regime show clear evidence of transport via parallel QDs in the form of a beating pattern of small and much larger diamonds, see Fig1(b). [3] We attribute the small-diamond pattern to electron transport in the core and the larger-diamond pattern to hole transport via the shell. From shifts in the conduction lines at the degeneracy point we extract an upper estimation of the electron-hole interaction strength of 4.5 meV.

figureMalinNilsson.png
Figure 1. Charge stability diagram (a) of a few-electron quantum dot and (b) of parallel electron-hole quantum dots.

References
[1] M. Nilsson et al., Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering, Phys. Rev. B 93, (2016).
[2] L. Namazi et al., Selective GaSb radial growth on crystal phase engineered InAs nanowires, Nanoscale 7, (2015).
[3] M. Nilsson et al., Electron-hole interactions in coupled quantum dots based on nanowire crystal phase templates, Phys. Rev. B 94, (2016).

Publications:

"Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions"
I-Ju Chen , Sebastian Lehmann, Malin Nilsson, Pyry Kivisaari, Heiner Linke, Kimberly A. Dick, and Claes Thelander,
Nano Lett., 17 (2), 902-908, 2017
pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b04211

"Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates"
,
Malin Nilsson
, Luna Namazi, Sebastian Lehmann, Martin Leijnse, Kimberly A. Dick and Claes Thelander,
Phys. Rev. B 94, 115313, 2016
dx.doi.org/10.1103/PhysRevB.94.115313
arxiv.org/abs/1605.06081

"Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering"
,
Malin Nilsson, Luna Namazi, Sebastian Lehmann, Martin Leijnse, Kimberly A. Dick and Claes Thelander,
Phys. Rev. B 93, 195422, 2016
dx.doi.org/10.1103/PhysRevB.93.195422
arxiv.org/abs/1512.06887

"Selective GaSb radial growth on crystal phase engineered InAs nanowires"
,
Luna Namazi, Malin Nilsson, Sebastian Lehmann, Claes Thelander and Kimberly A. Dick,
Nanoscale 7, 10472-10481, 2015
http://dx.doi.org/10.1039/C5NR01165E

"Sn-Seeded GaAs Nanowires as Self-Assembled Radial p–n Junctions",
Rong Sun, Daniel Jacobsson, I-Ju Chen, Malin Nilsson, Claes Thelander, Sebastian Lehmann and Kimberly. A. Dick,
Nano Lett., 15 (6), 3757–3762, 2015
http://dx.doi.org/10.1021/acs.nanolett.5b00276

Teaching:

Teaching assistant:
2017-2014: Concepts in Quantum Physics (FAFA55)
Course coordinator: Heiner Linke

2017-2012: Solid State Physics (FFFF05)
Course coordinator: Carina Fasth

2017-2016: Physics of low-dimensional structures and quantum devices (FFF042)
Course coordinators: Mats-Erik Pistol and Martin Leijnse

2017: Advanced Processing of Nanostructures (FFFN01)
Course coordinator: Ivan Maximov

2013: Processing and Device Technology (FFF110)
Course coordinator: Claes Thelander

Commission of trust:

- Outreach work, giving lectures at high schools ect. (2014 - Ongoing)

- Member of the
Linnaeus Graduate School board, PhD-student representative. (2015 - 2017)


- Member of the NanoLund board, PhD-student representative. (2014)

- Chairman and coordinator of the Device Physics subgroup's weekly meeting at NanoLund. (2013 - 2014)






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