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Portrait of Andreas Wacker. Photo: Kennet Ruona

Andreas Wacker

Professor

Portrait of Andreas Wacker. Photo: Kennet Ruona

InAs nanowire metal-oxide-semiconductor capacitors

Author

  • Stefano Roddaro
  • Kristian Storm
  • Gvidas Astromskas
  • Lars Samuelson
  • Lars-Erik Wernersson
  • Olov Karlström
  • Andreas Wacker

Summary, in English

We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • Mathematical Physics

Publishing year

2008

Language

English

Publication/Series

Applied Physics Letters

Volume

92

Issue

25

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Status

Published

Research group

  • Linne Center for Nanoscience and Quantum Engineering
  • Nano

ISBN/ISSN/Other

  • ISSN: 0003-6951