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Anne L'Huillier

Anne l'Huillier

Professor

Anne L'Huillier

Few-cycle lightwave-driven currents in a semiconductor at high repetition rate

Author

  • Fabian Langer
  • Yen Po Liu
  • Zhe Ren
  • Vidar Flodgren
  • Chen Guo
  • Jan Vogelsang
  • Sara Mikaelsson
  • Ivan Sytcevich
  • Jan Ahrens
  • Anne L’Huillier
  • Cord L. Arnold
  • Anders Mikkelsen

Summary, in English

When an intense, few-cycle light pulse impinges on a dielectric or semiconductor material, the electric field will interact nonlinearly with the solid, driving a coherent current. An asymmetry of the ultrashort, carrier-envelope-phase-stable waveform results in a net transfer of charge, which can be measured by macroscopic electric contact leads. This effect has been pioneered with extremely short, single-cycle laser pulses at low repetition rate, thus limiting the applicability of its potential for ultrafast electronics. We investigate lightwave-driven currents in gallium nitride using few-cycle laser pulses of nearly twice the duration and at a repetition rate 2 orders of magnitude higher than in previous work. We successfully simulate our experimental data with a theoretical model based on interfering multiphoton transitions, using the exact laser pulse shape retrieved from dispersion-scan measurements. Substantially increasing the repetition rate and relaxing the constraint on the pulse duration marks an important step forward toward applications of controlling currents with light.

Department/s

  • Atomic Physics
  • NanoLund
  • Synchrotron Radiation Research

Publishing year

2020-04-01

Language

English

Pages

276-279

Publication/Series

Optica

Volume

7

Issue

4

Document type

Journal article

Publisher

Optical Society of America

Topic

  • Atom and Molecular Physics and Optics

Status

Published

ISBN/ISSN/Other

  • ISSN: 2334-2536