Transient photocurrent of bulk heterojunction solar cell characterized by ns-laser and sub-ms LED

Summary, in English

We measure the transient photocurrent of APFO3:PCBM bulk heterojunction solar cells illuminated with ns-laser and sub-ms LED light sources. The ratio of the number of collective charges to the number of excited photon (external quantum efficiency, EQE) and the transient photocurrent fall times have been carried out with difference pulse durations and fluences. The EQEs characterized by ns-laser source are shown to obey the bimolecular recombination at high excitation fluences. The increasing of transient photocurrent fall times suggests that the fall times of free charge carriers are effected by deep trap density of state (DoS) and thus the free charge carriers have a sufficient time for bimolecular recombination at short circuit condition. At the same fluences, however, the EQEs characterized by sub-ms LED sources exhibit an excitation fluences independence of EQE. The transient photocurrent fall times with sub-ms LED sources are rather constant when the excitation fluences increases indicating that the deep trap DoS has less effect at short circuit condition for longer pulse duration.