
Arkady Yartsev
Researcher

GaAsP Nanowires Grown by Aerotaxy
Author
Summary, in English
We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.
Department/s
- Solid State Physics
- NanoLund: Center for Nanoscience
- Chemical Physics
Publishing year
2016-09-14
Language
English
Pages
5701-5707
Publication/Series
Nano Letters
Volume
16
Issue
9
Full text
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
- Condensed Matter Physics
Keywords
- Aerotaxy
- GaAsP nanowires
- gas phase
- zincblende
Status
Published
Research group
- nCHREM/ Reine Wallenberg
ISBN/ISSN/Other
- ISSN: 1530-6984