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Submit your abstract to the Nitride Semiconductors Conference (ICNS-15)

Photo collage of a woman and a logotype.
Vanya Darakchieva is one of the chairs in the coming-up conference ICNS-15. Photo: Jonas Tegenfeldt

The 15th International Conference on Nitride Semiconductors (ICNS-15) is just around the corner. Taking place in Malmö, July 6–11, the conference will showcase groundbreaking advancements in materials, physics, optical and electronic devices based on group-III nitride semiconductors.

As the call for abstracts deadline for the upcoming conference ICNS-15 approaches, we asked one of the chairs, Vanya Darakchieva, a professor of Solid-State Physics and a PI at NanoLund, some questions.

What’s your advice to those preparing abstracts to submit by February 23rd?

“Select a topic that aligns with one of the following categories: Growth, Characterization, Optical Devices, or Electronic Devices. Be clear about your research’s significance and how it advances III-nitride semiconductors. Highlight innovations like new materials, novel growth and characterization methods, interesting physics, or enhanced device performance. Keep the title concise and informative. Submit before March 10th!" 

What excites you the most about this conference?

“It’s hard to choose just one highlight! The plenary sessions will cover cutting-edge developments such as hexagonal boron nitride for quantum applications, deep UV lasers, GaN-based VCSELs, AI-driven III-nitride electronics, and more. I am particularly looking forward to the poster sessions and exhibitions, which offer a chance to discover fresh, innovative results from young researchers. The gala dinner on July 10th will be unforgettable, with a special Swedish-flavoured performance by Elisabeth Melander and her students.

This year marks the 30th anniversary of ICNS, which has grown from humble beginnings to a major international event. It brings together researchers from industry, academia, and start-ups, sparking innovations and new collaborations in nitride semiconductors.

Above all, I am super excited to connect with colleagues worldwide, exchange ideas, make new acquaintances, and reconnect with old friends.”

Would you like to mention a few of the challenges that ICNS-15 is addressing, and how?

III-nitride semiconductors are key to driving energy-efficient solutions for high-power, high-frequency applications. At ICNS-15, we will focus on the latest advancements in III-nitride power electronics, which are essential for the electrification of mobility and for future wireless communication infrastructure operating above 100 GHz. Another important problem we address is to develop energy-efficient lighting and display solutions.

In short, ICNS-15 will tackle challenges in high-speed communication, power electronics, sustainable development, efficient LEDs/displays, new physics, emerging materials, and more.” 

Awards to watch for: Young scientists can apply for the Best Student Award and Outstanding Poster Award, recognizing exceptional contributions to nitride semiconductor research.

A special honour: We’re introducing the Isamu Akasaki Memorial Award and Lecture to celebrate those who have made life-long contributions to III-nitride semiconductor research. This award honors the legacy of Isamu Akasaki, Nobel Laureate in Physics for his role in developing blue LEDs.

How to go about your abstract

Structure: Structure the abstract effectively – the title should be concise and informative, and no special characters are allowed. 
Introduction: Provide a brief background and state the problem. 
Methods: Summarize the approach used (e.g., growth technique, characterization method, device fabrication process). 
Results & Discussion: Highlight key findings with quantitative/qualitative data. 
Conclusion: Summarize the main takeaways and potential impact. You are welcome to include an extra page with images and tables. 
The length limit is 2400 characters with spaces.