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Portrait of Carina Fasth

Carina Fasth

Associate Professor

Portrait of Carina Fasth

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

Author

  • Adam Hansen
  • Mikael Björk
  • Carina Fasth
  • Claes Thelander
  • Lars Samuelson

Summary, in English

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

Department/s

  • Solid State Physics

Publishing year

2005

Language

English

Pages

1-205328

Publication/Series

Physical Review B. Condensed Matter and Materials Physics

Volume

71

Document type

Journal article

Publisher

American Physical Society

Topic

  • Condensed Matter Physics

Status

Published