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Portrait of Carina Fasth

Carina Fasth

Associate Professor

Portrait of Carina Fasth

Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.

Author

  • Kristian Storm
  • Gustav Nylund
  • Magnus Borgström
  • Jesper Wallentin
  • Carina Fasth
  • Claes Thelander
  • Lars Samuelson

Summary, in English

As downscaling of semiconductor devices continues, one or a few randomly placed dopants may dominate the characteristics. Furthermore, due to the large surface-to-volume ratio of one-dimensional devices, the position of the Fermi level is often determined primarily by surface pinning, regardless of doping level. In this work, we investigate the possibility of tuning the Fermi level dynamically with wrap-around gates, instead of statically setting it using the impurity concentration. This is done using Ω-gated metal-oxide-semiconductor field-effect transistors with HfO(2)-capped InP nanowires as channel material. It is found that induced n-type devices exhibit an optimal inverse subthreshold slope of 68 mV/decade. By adjusting the growth and process parameters, it is possible to produce ambipolar devices, in which the Fermi level can be tuned across the entire band gap, making it possible to induce both n-type and p-type conduction.

Department/s

  • Solid State Physics
  • NanoLund: Center for Nanoscience

Publishing year

2011

Language

English

Pages

1127-1130

Publication/Series

Nano Letters

Volume

11

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992