High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs

Summary, in English

In this paper we present 15 nm InAs nanowire lateral

MOSFETs with an Ω-gate. The nanowires are grown from

size-selected Au-aerosols by means of metal-organic vapor

phase epixtaxy (MOVPE). In order to reduce the source and

drain resistances, n-type dopants were introduced in the bottom

and top parts of the nanowire forming a n-i-n structure. We

report experimental data for 15 nm InAs nanowire MOSFETs,

LG = 150 nm, with a normalized transconducatance gm =

0.7 S/mm (normalized to the circumference) and a current

density Je = 24 MA/cm, comparable to modern high electron

mobility transistors (HEMTs)