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Claes Thelander

Claes Thelander

Associate Professor

Claes Thelander

GaSb nanowire single-hole transistor

Author

  • Bahram Ganjipour
  • Henrik Nilsson
  • Mattias Borg
  • Lars-Erik Wernersson
  • Lars Samuelson
  • Hongqi Xu
  • Claes Thelander

Summary, in English

We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year

2011

Language

English

Publication/Series

Applied Physics Letters

Volume

99

Issue

26

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0003-6951