Spin relaxation in InAs nanowires studied by tunable weak antilocalization
Summary, in English
We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.
- Solid State Physics
Physical Review B. Condensed Matter and Materials Physics
American Physical Society
- Condensed Matter Physics