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Claes Thelander

Claes Thelander

Associate Professor

Claes Thelander

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Author

  • Henrik Nilsson
  • Tim Duty
  • Simon Abay
  • Chris Wilson
  • Jakob Wagner
  • Claes Thelander
  • Per Delsing
  • Lars Samuelson

Summary, in English

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2008

Language

English

Pages

872-875

Publication/Series

Nano Letters

Volume

8

Issue

3

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992