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Claes Thelander

Claes Thelander

Associate Professor

Claes Thelander

Radial tunnel diodes based on InP/InGaAs core-shell nanowires

Author

  • Ofogh Tizno
  • Bahram Ganjipour
  • Magnus Heurlin
  • Claes Thelander
  • Magnus T. Borgström
  • Lars Samuelson

Summary, in English

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.

Department/s

  • Solid State Physics
  • NanoLund: Center for Nanoscience

Publishing year

2017-03-13

Language

English

Publication/Series

Applied Physics Letters

Volume

110

Issue

11

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics
  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951