Claes Thelander
Associate Professor
Electrical properties of InAs-based nanowires
Author
Summary, in English
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes
Department/s
- Solid State Physics
- Centre for Analysis and Synthesis
Publishing year
2004
Language
English
Pages
449-452
Publication/Series
AIP Conference Proceedings
Volume
723
Document type
Conference paper
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Keywords
- InAs-InP
- Au
- resonant tunneling diodes
- catalysts
- heterostructures
- semiconductor nanowires
- electrical properties
- chemical beam epitaxy
- gold nanoparticles
- metal organic vapor phase epitaxy
- single electron transistors
- InP tunnel barriers
Conference name
Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials
Conference date
2004-03-06 - 2004-03-13
Conference place
Tirol, Austria
Status
Published
ISBN/ISSN/Other
- ISSN: 1551-7616
- ISSN: 0094-243X
- CODEN: APCPCS