Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Abinaya Krishnaraja, Johannes Svensson, Elvedin Memisevic, Zhongyunshen Zhu, Axel R. Persson, et al.
(2020) ACS Applied Electronic Materials, 2 p.2882-2887
Journal article

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Ali Saeidi, Teodor Rosca, Elvedin Memisevic, Igor Stolichnov, Matteo Cavalieri, et al.
(2020) Nano Letters, 20 p.3255-3262
Journal article

Trap-aware compact modeling and power-performance assessment of III-V tunnel FET

Yang Xiang, Dmitry Yakimets, Saurabh Sant, Elvedin Memisevic, Marie Garcia Bardon, et al.
(2019) 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
Conference paper

An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays : Digital and Analog Figures of Merit from 300K to 10K

T. Rosca, A. Saeidi, E. Memisevic, L. E. Wernersson, A. M. Ionescu
(2019) 2018 IEEE International Electron Devices Meeting, IEDM 2018, 2018 p.1-13
Conference paper

Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars Erik Wernersson
(2018) IEEE Electron Device Letters, 39 p.1089-1091
Journal article

Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind, et al.
(2018) 2018 76th Device Research Conference (DRC) , p.137-138
Conference paper

RF Characterisation of Vertical III-V Nanowire Tunnel FETs

Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind, et al.
(2018)
Conference paper

Fabrication of Tunnel Field-Effect Transistors

Abinaya Krishnaraja, Elvedin Memisevic, Markus Hellenbrand, Johannes Svensson, Erik Lind, et al.
(2018)
Conference paper

Capacitance Measurements in Vertical III-V Nanowire TFETs

Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind, et al.
(2018) IEEE Electron Device Letters, 39 p.943-946
Journal article (letter)

Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

J. Zhang, C. Alessandri, P. Fay, A. Seabaugh, T. Ytterdal, et al.
(2018) 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, 2018-March p.1-2
Conference paper

Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs

Saurabh Sant, Elvedin Memisevic, Lars-Erik Wernersson, Andreas Schenk
(2018) Composants nanoélectroniques
Journal article

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors

Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2018) Nanotechnology, 29
Journal article

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2017) IEEE Transactions on Electron Devices, 64 p.4746-4751
Journal article

The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

A. Schenk, S. Sant, K. Moselund, H. Riel, E. Memisevic, et al.
(2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, 2017-September p.273-276
Conference paper

Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

Markus Hellenbrand, Elvedin Memisevic, Martin Berg, Olli-Pekka Kilpi, Johannes Svensson, et al.
(2017) IEEE Electron Device Letters
Journal article (letter)

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2017) 47th European Solid-State Device Research Conference (ESSDERC), 2017 , p.38-41
Conference paper

Vertical III-V Nanowire Tunnel Field-Effect Transistor

Elvedin Memisevic
(2017)
Dissertation

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memisevic, Markus Hellenbrand, Erik Lind, Axel Persson, Saurabh Sant, et al.
(2017) Nano Letters
Journal article (letter)

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V

E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind, L. E. Wernersson
(2017) 2016 IEEE International Electron Devices Meeting, IEDM 2016 , p.1-19
Conference paper

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Elvedin Memisevic, Erik Lind, Markus Hellenbrand, Johannes Svensson, Lars-Erik Wernersson
(2017) IEEE Electron Device Letters , p.1661-1664
Journal article (letter)

Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2017)
Conference paper

InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

Elvedin Memisevic, J. Svensson, E. Lind, L. E. Wernersson
(2016) 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 , p.154-155
Conference paper

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Elvedin Memisevic, Johannes Svensson, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson
(2016) IEEE Electron Device Letters, 37 p.549-552
Journal article (letter)

Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates

Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2015)
Conference paper

III-V Heterostructure Nanowire Tunnel FETs

Erik Lind, Elvedin Memisevic, Anil Dey, Lars-Erik Wernersson
(2015) IEEE Journal of the Electron Devices Society, 3 p.96-102
Journal article

RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz

Sofia Johansson, Elvedin Memisevic, Lars-Erik Wernersson, Erik Lind
(2014) 26th International Conference on Indium Phosphideand Related Materials (IPRM)
Conference paper

Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors

Elvedin Memisevic, Erik Lind, Lars-Erik Wernersson
(2014) Journal of Vacuum Science and Technology B, 32
Journal article

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Sofia Johansson, Elvedin Memisevic, Lars-Erik Wernersson, Erik Lind
(2014) IEEE Electron Device Letters, 35 p.518-520
Journal article