Erik Lind
Professor, Coordinator Semiconductor Technology
Research:
My research interest is the the area of high performance nanoelectronics. We build, characterize and model III-V nanowire/trigate MOSFETs and various steep slope devices. More information can be found on my homepage.
Go to Erik Lind's homepage
Publications
Displaying of publications. Sorted by year, then title.
Time evolution of surface species during the ALD of high-k oxide on InAs
Giulio D'Acunto, Payam Shayesteh, Esko Kokkonen, Virginia Boix de la Cruz, Foqia Rehman, et al.
(2023) Surfaces and Interfaces, 39
Journal articleThree-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
Johannes Svensson, Patrik Olausson, Heera Menon, Sebastian Lehmann, Erik Lind, et al.
(2023) Nano Letters, 23 p.4756-4761
Journal articleLow temperature atomic hydrogen annealing of InGaAs MOSFETs
Patrik Olausson, Rohit Yadav, Rainer Timm, Erik Lind
(2023) Semiconductor Science and Technology, 38
Journal article8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
Navya Sri Garigapati, Erik Lind
(2023) Journal of Applied Physics, 133
Journal articleCryogenic Characteristics of InGaAs MOSFET
L. Sodergren, P. Olausson, E. Lind
(2023) IEEE Transactions on Electron Devices
Journal articleTuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Philipp Gribisch, Rosalia Delgado Carrascon, Vanya Darakchieva, Erik Lind
(2023) IEEE Transactions on Electron Devices, 70 p.2408-2414
Journal articleLow-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
Lasse Södergren, Patrik Olausson, Erik Lind
(2022) Nano Letters, 22 p.3884-3888
Journal articlePerformance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
Stefan Andric, Olli-Pekka Kilpi, Saketh, Ram Mamidala, Johannes Svensson, Erik Lind, et al.
(2022) IEEE Transactions on Electron Devices, 69 p.3055-3055
Journal articleStrained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
Navya Sri Garigapati, Lasse Södergren, Patrik Olausson, Erik Lind
(2022) Applied Physics Letters, 120
Journal articleOxygen relocation during HfO2 ALD on InAs
Giulio D’Acunto, Esko Kokkonen, Payam Shayesteh, Virginia Boix, Foqia Rehman, et al.
(2022) Faraday Discussions, 236 p.71-85
Journal articleLateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
Stefan Andric, Fredrik Lindelow, Lars Ohlsson Fhager, Erik Lind, Lars Erik Wernersson
(2022) IEEE Transactions on Microwave Theory and Techniques, 70 p.1284-1291
Journal articleTemplate-Assisted Selective Epitaxy of InAs on W
Johannes Svensson, Patrik Olausson, Heera Menon, Erik Lind, Mattias Borg
(2022) 2022 Compound Semiconductor Week, CSW 2022
Conference paperOptimization of Near-Surface Quantum Well Processing
Patrik Olausson, Lasse Södergren, Mattias Borg, Erik Lind
(2021) Physica Status Solidi (A) Applications and Materials Science, 218
Journal articleCapacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
Navya S. Garigapati, Fredrik Lindelow, Lasse Sodergren, Erik Lind
(2021) IEEE Transactions on Electron Devices, 68 p.3762-3767
Journal articleIncreased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Olli Pekka Kilpi, Stefan Andric, Johannes Svensson, Mamidala Saketh Ram, Erik Lind, et al.
(2021) IEEE Electron Device Letters, 42 p.1596-1598
Journal articleDoping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Adam Jönsson, Johannes Svensson, Elisabetta Maria Fiordaliso, Erik Lind, Markus Hellenbrand, et al.
(2021) ACS Applied Electronic Materials, 3 p.5240-5247
Journal articleAtomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
Giulio D'Acunto, Andrea Troian, Esko Kokkonen, Foqia Rehman, Yen Po Liu, et al.
(2020) ACS Applied Electronic Materials, 2 p.3915-3922
Journal articleGate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
Adam Jönsson, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2020) IEEE Transactions on Electron Devices, 67 p.4118-4122
Journal articleMobility of near surface MOVPE grown InGaAs/InP quantum wells
Lasse Södergren, Navya Sri Garigapati, Mattias Borg, Erik Lind
(2020) Applied Physics Letters, 117
Journal articleIII-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg, Erik Lind
(2020) Semiconductor Science and Technology, 35
Journal articleVertical nanowire III–V MOSFETs with improved high-frequency gain
Olli-Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2020) Electronics Letters, 56 p.669-671
Journal articleWeyl Semi-Metal-Based High-Frequency Amplifiers
A. Toniato, B. Gotsmann, E. Lind, C. B. Zota
(2020) Technical Digest - International Electron Devices Meeting, IEDM, 2019-December
Conference paperEffects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
Markus Hellenbrand, Erik Lind, Olli-Pekka Kilpi, Lars-Erik Wernersson
(2020) Solid-State Electronics, 171
Journal articleLow temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
Yen Po Liu, Lasse Södergren, S. Fatemeh Mousavi, Yi Liu, Fredrik Lindelöw, et al.
(2020) Applied Physics Letters, 117
Journal articleTuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
Abinaya Krishnaraja, Johannes Svensson, Elvedin Memisevic, Zhongyunshen Zhu, Axel R. Persson, et al.
(2020) ACS Applied Electronic Materials, 2 p.2882-2887
Journal articleHigh-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
Olli Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Axel R. Persson, Reine Wallenberg, et al.
(2020) IEEE Electron Device Letters, 41 p.1161-1164
Journal articleReducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
Abinaya Krishnaraja, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2019) Applied Physics Letters, 115
Journal articleComparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2019)
Conference paperFabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
Abinaya Krishnaraja, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2019)
Conference paper: abstractLow-Frequency Noise in Nanowire and Planar III-V MOSFETs
Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2019) Microelectronic Engineering
Journal articleElectrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
Olli Pekka Kilpi, Johannes Svensson, Erik Lind, Lars Erik Wernersson
(2019) IEEE Journal of the Electron Devices Society, 7 p.70-75
Journal articleVertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars Erik Wernersson
(2018) IEEE Electron Device Letters, 39 p.1089-1091
Journal articleEffect of Gate Oxide Defects on Tunnel Transistor RF Performance
Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind, et al.
(2018) 2018 76th Device Research Conference (DRC) , p.137-138
Conference paperRF Characterisation of Vertical III-V Nanowire Tunnel FETs
Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind, et al.
(2018)
Conference paperFabrication of Tunnel Field-Effect Transistors
Abinaya Krishnaraja, Elvedin Memisevic, Markus Hellenbrand, Johannes Svensson, Erik Lind, et al.
(2018)
Conference paperCapacitance Measurements in Vertical III-V Nanowire TFETs
Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind, et al.
(2018) IEEE Electron Device Letters, 39 p.943-946
Journal article (letter)A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Seiko Netsu, Markus Hellenbrand, Cezar B. Zota, Yasuyuki Miyamoto, Erik Lind
(2018) IEEE Journal of the Electron Devices Society, 6 p.408-412
Journal articleImpact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2018) Nanotechnology, 29
Journal articleJunctionless tri-gate InGaAs MOSFETs
Cezar B. Zota, Mattias Borg, Lars Erik Wernersson, Erik Lind
(2017) Japanese Journal of Applied Physics, 56
Journal articleInAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2017) IEEE Transactions on Electron Devices, 64 p.4746-4751
Journal articleVertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Olli Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, et al.
(2017) Nano Letters, 17 p.6006-6010
Journal articleRandom telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2017) 47th European Solid-State Device Research Conference (ESSDERC), 2017 , p.38-41
Conference paperFirst InGaAs lateral nanowire MOSFET RF noise measurements and model
Lars Ohlsson, Fredrik Lindelow, Cezar B. Zota, Matthias Ohlrogge, Thomas Merkle, et al.
(2017) 75th Annual Device Research Conference, DRC 2017
Conference paperRecord performance for junctionless transistors in InGaAs MOSFETs
Cezar B. Zota, Mattias Borg, Lars Erik Wernersson, Erik Lind
(2017) 2017 Symposium on VLSI Technology, VLSI Technology 2017 , p.34-35
Conference paperVertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
Olli Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind, Lars Erik Wernersson
(2017) 2017 Symposium on VLSI Technology, VLSI Technology 2017 , p.36-37
Conference paper1/f and RTS Noise in InGaAs Nanowire MOSFETs
Christian Möhle, Cezar Zota, Markus Hellenbrand, Erik Lind
(2017)
Conference paper1/f and RTS noise in InGaAs nanowire MOSFETs
C. Möhle, C. B. Zota, M. Hellenbrand, E. Lind
(2017) Microelectronic Engineering, 178 p.52-55
Journal articleIndividual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Elvedin Memisevic, Markus Hellenbrand, Erik Lind, Axel Persson, Saurabh Sant, et al.
(2017) Nano Letters
Journal article (letter)Gated Hall effect measurements on selectively grown InGaAs nanowires
F. Lindelöw, C. B. Zota, E. Lind
(2017) Nanotechnology, 28
Journal articleVertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind, L. E. Wernersson
(2017) 2016 IEEE International Electron Devices Meeting, IEDM 2016 , p.1-19
Conference paperInGaAs tri-gate MOSFETs with record on-current
Cezar B. Zota, Fredrik Lindelow, Lars Erik Wernersson, Erik Lind
(2017) 2016 IEEE International Electron Devices Meeting, IEDM 2016 , p.1-4
Conference paperImpact of doping and diameter on the electrical properties of GaSb nanowires
Aein S. Babadi, Johannes Svensson, Erik Lind, Lars Erik Wernersson
(2017) Applied Physics Letters, 110
Journal articleImpact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Elvedin Memisevic, Erik Lind, Markus Hellenbrand, Johannes Svensson, Lars-Erik Wernersson
(2017) IEEE Electron Device Letters , p.1661-1664
Journal article (letter)Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2017)
Conference paperHigh-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
C. B. Zota, F. Lindelöw, L. E. Wernersson, E. Lind
(2016) Electronics Letters, 52 p.1869-1871
Journal articleHigh-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
Cezar B. Zota, Lars Erik Wernersson, Erik Lind
(2016) IEEE Electron Device Letters, 37 p.1264-1267
Journal articleInAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
Elvedin Memisevic, J. Svensson, E. Lind, L. E. Wernersson
(2016) 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 , p.154-155
Conference paperInGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
Cezar B. Zota, Fredrik Lindelöw, Lars Erik Wernersson, Erik Lind
(2016) 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Conference paperHigh frequency III-V nanowire MOSFETs
Erik Lind
(2016) Semiconductor Science and Technology, 31
Journal article reviewSize-effects in indium gallium arsenide nanowire field-effect transistors
Cezar B. Zota, E. Lind
(2016) Applied Physics Letters, 109
Journal articleElectrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, et al.
(2016) IEEE Electron Device Letters, 37 p.966-969
Journal article (letter)Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson, Lars Erik Wernersson
(2016) IEEE Transactions on Device and Materials Reliability, 16 p.112-116
Journal articleAmplifier Design Using Vertical InAs Nanowire MOSFETs
Kristofer Jansson, Erik Lind, Lars Erik Wernersson
(2016) IEEE Transactions on Electron Devices, 63 p.2353-2359
Journal articleScaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
Elvedin Memisevic, Johannes Svensson, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson
(2016) IEEE Electron Device Letters, 37 p.549-552
Journal article (letter)Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
Jun Wu, Aein Shiri Babadi, Daniel Jacobsson, Jovana Colvin, Sofie Yngman, et al.
(2016) Nano Letters, 16 p.2418-2425
Journal articleZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Aein Shiri Babadi, Erik Lind, Lars Erik Wernersson
(2016) Applied Physics Letters, 108
Journal articleSelf-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Martin Berg, Karl-Magnus Persson, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, et al.
(2016) Technical Digest - International Electron Devices Meeting, IEDM, 2016-February
Conference paperSingle suspended InGaAs nanowire MOSFETs
Cezar B. Zota, Lars Erik Wernersson, Erik Lind
(2016) Technical Digest - International Electron Devices Meeting, IEDM , p.1-31
Journal articleRF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
Jun Wu, Kristofer Jansson, Aein Shiri Babadi, Martin Berg, Erik Lind, et al.
(2016) IEEE Transactions on Electron Devices, 63 p.584-589
Journal articleBallistic modeling of InAs nanowire transistors
Kristofer Jansson, Erik Lind, Lars-Erik Wernersson
(2016) Solid-State Electronics, 115 p.47-53
Journal articleHigh Frequency InGaAs Nanowire MOSFETs
E. Lind
(2015) 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
Conference paperInP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
Jiongjiong Mo, Erik Lind, Lars-Erik Wernersson
(2015) IEEE Transactions on Electron Devices, 62 p.501-506
Journal articleA transmission line method for evaluation of vertical InAs nanowire contacts
Martin Berg, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2015) Applied Physics Letters, 107
Journal articleQuantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
Cezar Zota, David Lindgren, Lars-Erik Wernersson, Erik Lind
(2015) ACS Nano, 9 p.9892-9897
Journal articleDefect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson, Lars-Erik Wernersson
(2015) Applied Physics Letters, 106
Journal articleVertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
(2015)
Conference paperIII-V Heterostructure Nanowire Tunnel FETs
Erik Lind, Elvedin Memisevic, Anil Dey, Lars-Erik Wernersson
(2015) IEEE Journal of the Electron Devices Society, 3 p.96-102
Journal articleIn0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
Cezar Zota, Lars-Erik Wernersson, Erik Lind
(2014) IEEE Electron Device Letters, 35 p.342-344
Journal articleIn0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
Cezar Zota, Lars-Erik Wernersson, Erik Lind
(2014) 2014 72nd Annual Device Research Conference (DRC) , p.209-210
Conference paperHigh Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
Cezar Zota, Lars-Erik Wernersson, Erik Lind
(2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
Conference paperRF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
Sofia Johansson, Elvedin Memisevic, Lars-Erik Wernersson, Erik Lind
(2014) 26th International Conference on Indium Phosphideand Related Materials (IPRM)
Conference paperSingle Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
Martin Berg, Karl-Magnus Persson, Erik Lind, Henrik Sjöland, Lars-Erik Wernersson
(2014) 26th International Conference on Indium Phosphideand Related Materials (IPRM)
Conference paperInAs nanowire MOSFET differential active mixer on Si-substrate
Karl-Magnus Persson, Martin Berg, Henrik Sjöland, Erik Lind, Lars-Erik Wernersson
(2014) Electronics Letters, 50 p.682-682
Journal articleIntrinsic Performance of InAs Nanowire Capacitors
Kristofer Jansson, Erik Lind, Lars-Erik Wernersson
(2014) IEEE Transactions on Electron Devices, 61 p.452-459
Journal articleRadio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Cezar Zota, Guntrade Roll, Lars-Erik Wernersson, Erik Lind
(2014) IEEE Transactions on Electron Devices, 61 p.4078-4083
Journal articleIn GaAs MOSFETs with InP Drain
Jiongjiong Mo, Erik Lind, Lars-Erik Wernersson
(2014) 2014 72nd Annyal Device Research Conference (DRC) , p.119-120
Conference paperAsymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
Jiongjiong Mo, Erik Lind, Lars-Erik Wernersson
(2014) IEEE Electron Device Letters, 35 p.515-517
Journal articleAsymmetric InGaAs MOSFETs with InGaAs source and InP drain
Jiongjiong Mo, Erik Lind, Lars-Erik Wernersson
(2014) 26th International Conference on Indium Phosphideand Related Materials (IPRM)
Conference paperDesign of Radial Nanowire Tunnel Field-Effect Transistors
Anil Dey, Erik Lind, Johannes Svensson, M. Ek, C. Thelander, et al.
(2014) 2014 72nd Annual Device Research Conference (DRC) , p.81-82
Conference paperThin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
Elvedin Memisevic, Erik Lind, Lars-Erik Wernersson
(2014) Journal of Vacuum Science and Technology B, 32
Journal articleModeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
Aein Shiri Babadi, Erik Lind, Lars-Erik Wernersson
(2014) Applied Physics Reviews, 116
Journal articleInAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
Martin Berg, Karl-Magnus Persson, Jun Wu, Erik Lind, Henrik Sjöland, et al.
(2014) Nanotechnology, 25
Journal articleReduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
Jiongjiong Mo, Erik Lind, Guntrade Roll, Lars-Erik Wernersson
(2014) Applied Physics Letters, 105
Journal articleHigh-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
Sofia Johansson, Elvedin Memisevic, Lars-Erik Wernersson, Erik Lind
(2014) IEEE Electron Device Letters, 35 p.518-520
Journal articleRF and DC Analysis of Stressed InGaAs MOSFETs
Guntrade Roll, Erik Lind, Mikael Egard, Sofia Johansson, Lars Ohlsson, et al.
(2014) IEEE Electron Device Letters, 35 p.181-183
Journal articleHigh-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, et al.
(2014) AIP Advances, 4
Journal articleRF reliability of gate last InGaAs nMOSFETs with high-k dielectric
Guntrade Roll, Mikael Egard, Sofia Johannson, Lars Ohlsson, Lars Erik Wernersson, et al.
(2013) 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 , p.38-41
Conference paperA High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
Sofia Johansson, Martin Berg, Karl-Magnus Persson, Erik Lind
(2013) IEEE Transactions on Electron Devices, 60 p.776-781
Journal articleInterface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
Olof Persson, Erik Lind, Edvin Lundgren, J. Rubio-Zuazo, G. R. Castro, et al.
(2013) AIP Advances, 3
Journal articleHigh-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Anil Dey, Mattias Borg, Bahram Ganjipour, Martin Ek, Kimberly Dick Thelander, et al.
(2013) IEEE Electron Device Letters, 34 p.211-213
Journal article1/f-noise in Vertical InAs Nanowire Transistors
Karl-Magnus Persson, Martin Berg, Erik Lind, Lars-Erik Wernersson
(2013) 2013 International Conference on Indium Phosphide and Related Materials (IPRM) , p.1-2
Conference paperCharacterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
Sofia Johansson, Jiongjiong Mo, Erik Lind
(2013) 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) , p.53-56
Conference paperExtraction of oxide traps in III-V MOSFETs using RF transconductance measurements
Erik Lind, Sofia Johansson
(2013) ECS Transactions, 52 p.415-419
Conference paperCombining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
Anil Dey, Johannes Svensson, Martin Ek, Erik Lind, Claes Thelander, et al.
(2013) Nano Letters, 13 p.5919-5924
Journal articleInAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
C. H. Wang, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, et al.
(2013) Applied Physics Letters, 103
Journal articleGaSb nanowire pFETs for III-V CMOS
Anil Dey, Johannes Svensson, Mattias Borg, Martin Ek, Erik Lind, et al.
(2013) IEEE Device Research Conference. Proceedings , p.13-14
Conference paper: abstractExtrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Sofia Johansson, et al.
(2013) IEEE Transactions on Electron Devices, 60 p.2761-2767
Journal articleFrequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
Mikael Egard, Mats Ärlelid, Lars Ohlsson, Mattias Borg, Erik Lind, et al.
(2013) 2013 International Conference on Indium Phosphide and Related Materials (IPRM) , p.1-2
Conference paperHigh-Performance InAs Nanowire MOSFETs
Anil Dey, Claes Thelander, Erik Lind, Kimberly Dick Thelander, Mattias Borg, et al.
(2012) IEEE Electron Device Letters, 33 p.791-793
Journal articleHigh-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Mikael Egard, Lars Ohlsson, Mats Ärlelid, Karl-Magnus Persson, Mattias Borg, et al.
(2012) IEEE Electron Device Letters, 33 p.369-371
Journal articleIn0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
Mikael Egard, Mats Ärlelid, Lars Ohlsson, Mattias Borg, Erik Lind, et al.
(2012) IEEE Electron Device Letters, 33 p.970-972
Journal articlePerformance Evaluation of III–V Nanowire Transistors
Kristofer Jansson, Erik Lind, Lars-Erik Wernersson
(2012) IEEE Transactions on Electron Devices, 59 p.2375-2382
Journal articleUniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
Sepideh Gorji, Sofia Johansson, Mattias Borg, Erik Lind, Kimberly Dick Thelander, et al.
(2012) Nanotechnology, 23
Journal articleAl2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Jun Wu, Erik Lind, Rainer Timm, Martin Hjort, Anders Mikkelsen, et al.
(2012) Applied Physics Letters, 100 p.3-132905
Journal articleHigh-k oxides on InAs 100 and 111B surfaces
Erik Lind, Jun Wu, Lars-Erik Wernersson
(2012) Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices, 45 p.61-67
Conference paperHigh frequency vertical InAs nanowire MOSFETs integrated on Si substrates
Sofia Johansson, Sepideh Gorji, Mikael Egard, Mattias Borg, Martin Berg, et al.
(2012) Physica Status Solidi. C, Current Topics in Solid State Physics, 9 p.350-353
Journal articleVertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Henrik Sjöland, et al.
(2012) IEEE Electron Device Letters , p.195-196
Conference paper: abstractHigh Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Anil Dey, Mattias Borg, Bahram Ganjipour, Martin Ek, Kimberly Dick Thelander, et al.
(2012) Device research conference , p.205-206
Conference paperInAs Nanowires for High Frequency Electronics
Karl-Magnus Persson, Sofia Johansson, Martin Berg, Anil Dey, Kristofer Jansson, et al.
(2012)
Conference paper: abstractHigh-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
Anil Dey, Claes Thelander, Erik Lind, Magnus Borgström, Mattias Borg, et al.
(2012)
Conference paperSelf-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
Mikael Egard, Lars Ohlsson, B. Borg, Lars Erik Wernersson, Erik Lind
(2011) 69th Device Research Conference, DRC 2011 - Conference Digest
Conference paperRF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Sofia Johansson, Mikael Egard, Sepideh Gorji, Mattias Borg, Martin Berg, et al.
(2011) IEEE Transactions on Microwave Theory and Techniques, 59 p.2733-2738
Journal articleBias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
Mikael Egard, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson
(2011) IEEE Transactions on Microwave Theory and Techniques, 59 p.672-677
Journal articleMemristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
Jie Sun, Erik Lind, Ivan Maximov, Hongqi Xu
(2011) IEEE Electron Device Letters, 32 p.131-133
Journal articleDesign of RF Properties for Vertical Nanowire MOSFETs
Erik Lind, Lars-Erik Wernersson
(2011) IEEE Transactions on Nanotechnology, 10 p.668-673
Journal articleImpulse-based 4 Gbit/s radio link at 60 GHz
Mats Ärlelid, Mikael Egard, Lars Ohlsson, Erik Lind, Lars-Erik Wernersson
(2011) Electronics Letters, 47 p.70-467
Journal article60 GHz impulse radio measurements
Mats Ärlelid, Lars Ohlsson, Mikael Egard, Erik Lind, Lars-Erik Wernersson
(2011) 2011 IEEE International Conference on Ultra-Wideband (ICUWB) , p.536-540
Conference paperTemperature and annealing effects on InAs nanowire MOSFETs
Sofia Johansson, Sepideh Gorji, Mattias Borg, Erik Lind, Lars-Erik Wernersson
(2011) Microelectronic Engineering, 88 p.1105-1108
Conference paperUnipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
Henrik Nilsson, Philippe Caroff, Erik Lind, Mats-Erik Pistol, Claes Thelander, et al.
(2011) Journal of Applied Physics, 110
Journal articleTemperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Gvidas Astromskas, Kristian Storm, Philippe Caroff, Magnus Borgström, Erik Lind, et al.
(2011) Microelectronic Engineering, 88 p.444-447
Conference paperHigh Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Mikael Egard, Lars Ohlsson, Mattias Borg, Filip Lenrick, Reine Wallenberg, et al.
(2011) 2011 IEEE International Electron Devices Meeting (IEDM)
Conference paper15 nm diameter InAs nanowire MOSFETs
Anil Dey, Claes Thelander, Magnus Borgström, Mattias Borg, Erik Lind, et al.
(2011) [Host publication title missing] , p.21-22
Conference paperInterface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Rainer Timm, Martin Hjort, Alexander Fian, Claes Thelander, Erik Lind, et al.
(2011) Microelectronic Engineering, 88 p.1091-1094
Conference paperInverter circuits based on vertical InAs nanowire MOSFETs
Anil Dey, Martin Berg, Mattias Borg, Sepideh Gorji, Kristofer Jansson, et al.
(2011)
Conference paperLow-frequency noise in vertical InAs nanowire FETs
Karl-Magnus Persson, Erik Lind, Anil Dey, Claes Thelander, Henrik Sjöland, et al.
(2010) IEEE Electron Device Letters, 31 p.428-430
Journal articleHigh Frequency Performance of Vertical InAs Nanowire MOSFET
Erik Lind, Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Mattias Borg, et al.
(2010) 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)
Conference paperVertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Karl-Magnus Persson, Anil Dey, et al.
(2010) Nano Letters, 10 p.809-812
Journal articleIII-V Nanowires-Extending a Narrowing Road
Lars-Erik Wernersson, Claes Thelander, Erik Lind, Lars Samuelson
(2010) Proceedings of the IEEE, 98 p.2047-2060
Journal articleReduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Rainer Timm, Fian Alexander, Martin Hjort, Claes Thelander, Erik Lind, et al.
(2010) Applied Physics Letters, 97
Journal article (letter)Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
Erik Lind, Yann-Michel Niquet, Hector Mera, Lars-Erik Wernersson
(2010) Applied Physics Letters, 96
Journal articleModelling and optimization of III/V transistors with matrices of nanowires
Christian Larsen, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson
(2010) Solid-State Electronics, 54 p.1505-1510
Journal articleTemperature dependent properties of InSb and InAs nanowire field-effect transistors
Henrik Nilsson, Philippe Caroff, Claes Thelander, Erik Lind, Olov Karlström, et al.
(2010) Applied Physics Letters, 96
Journal articleA 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
Mats Ärlelid, Lars-Erik Wernersson, Mikael Egard, Erik Lind
(2010) 2010 IEEE International Conference on Ultra-Wideband (ICUWB) , p.102-105
Conference paperAdmittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
Lars Ohlsson, Daniel Sjöberg, Mats Ärlelid, Mikael Egard, Erik Lind, et al.
(2010) [Host publication title missing] , p.253-256
Conference paperVertical InAs nanowire wrap gate transistors for integration on a Si platform
Anil Dey, Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Karl-Magnus Persson, et al.
(2010)
Conference paperTunneling-based devices and circuits
Lars-Erik Wernersson, Mikael Egard, Mats Ärlelid, Erik Lind
(2010) 2010 IEEE International Conference on IC Design and Technology (ICICDT) , p.190-193
Conference paperGated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
Mikael Egard, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson
(2010) Device Research Conference (DRC), 2010 , p.161-162
Conference paperCoherent V-Band Pulse Generator for Impulse Radio BPSK
Mats Ärlelid, Mikael Egard, Erik Lind, Lars-Erik Wernersson
(2010) IEEE Microwave and Wireless Components Letters, 20 p.414-416
Journal articleA 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
Mikael Egard, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson
(2010)
Conference paper: abstractOscillator for 60 GHz Super Regenerative Receiver
Mats Ärlelid, Mikael Egard, Erik Lind, Lars-Erik Wernersson
(2010) GigaHertz Symposium 2010 , p.51-51
Conference paper: abstractHigh-k oxides on (100), (111)A and (111)B InAs substrates
Erik Lind, Lars-Erik Wernersson, Rainer Timm, Martin Hjort, Anders Mikkelsen, et al.
(2010)
Conference paper60 GHz Wavelet Generator for Impulse Radio Applications
Mikael Egard, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson
(2010) GigaHertz Symposium 2010 , p.52-52
Conference paper: abstract20 GHz gated tunnel diode based UWB pulse generator
Mikael Egard, Mats Ärlelid, Erik Lind, Gvidas Astromskas, Lars-Erik Wernersson
(2009) Physica Status Solidi C: Current Topics In Solid State Physics, Vol 6, No 6, 6 p.1399-1402
Conference paper20 GHz Wavelet Generator Using a Gated Tunnel Diode
Mikael Egard, Mats Ärlelid, Erik Lind, Gvidas Astromskas, Lars-Erik Wernersson
(2009) IEEE Microwave and Wireless Components Letters, 19 p.386-388
Journal articleBand Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
Erik Lind, Martin Persson, Yann-Michel Niquet, Lars-Erik Wernersson
(2009) IEEE Transactions on Electron Devices, 56 p.201-205
Journal articleGated tunnel diode in oscillator applications with high frequency tuning
Lars-Erik Wernersson, Mats Ärlelid, Mikael Egard, Erik Lind
(2009) Solid-State Electronics, 53 p.292-296
Journal article60 GHz Wavelet Generator for Impulse Radio Applications
Mikael Egard, Mats Ärlelid, Erik Lind, Philippe Caroff, Gvidas Astromskas, et al.
(2009) European Microwave Conference, 2009. EuMC 2009 , p.1908-1911
Conference paper60 GHz Ultra-Wideband Impulse Radio Transmitter
Mats Ärlelid, Lars-Erik Wernersson, Mikael Egard, Erik Lind
(2009) IEEE International Conference on Ultra-Wideband, 2009. ICUWB 2009 , p.185-188
Conference paperFabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
Karl-Magnus Persson, Anil Dey, Erik Lind, Claes Thelander, Henrik Sjöland, et al.
(2009)
Conference paper: abstract60 GHz Wavelet Generator for Impulse Radio Applications
Mikael Egard, Mats Ärlelid, Erik Lind, Philippe Caroff, Gvidas Astromskas, et al.
(2009) EUWIT: 2009 European Wireless Technology Conference , p.234-237
Conference paperImproved breakdown voltages for type I InP/InGaAs DHBTs
Erik Lind, Zach Griffith, Mark J. W. Rodwell
(2008) 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008 , p.504-507
Conference paperHeterostructure Barriers in Wrap Gated Nanowire FETs
Linus Fröberg, Carl Rehnstedt, Claes Thelander, Erik Lind, Lars-Erik Wernersson, et al.
(2008) IEEE Electron Device Letters, 29 p.981-983
Journal articleGated tunnel diode pulse generator
Mikael Egard, Mats Ärlelid, Erik Lind, Gvidas Astromskas, Lars-Erik Wernersson
(2008) Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology , p.37-37
Conference paper: abstractNanowire field-effect transistor
Lars-Erik Wernersson, Erik Lind, Lars Samuelson, Truls Lowgren, Jonas Ohlsson
(2007) Japanese Journal of Applied Physics, 46 p.2629-2631
Journal articleHigh Tuning-Range VCO Using a Gated Tunnel Diode
Mats Ärlelid, Mikael Egard, Gvidas Astromskas, Erik Lind, Lars-Erik Wernersson
(2007) [Publication information missing] , p.798-799
Conference paper: abstractPulse Generator with Gated Tunnel Diode
Mats Ärlelid, Erik Lind, Mikael Egard, Lars-Erik Wernersson
(2007) Proceedings of Swedish System-on-Chip Conference (SSoCC)
Conference paperImproved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
Erik Lind, Ann Persson, Lars Samuelson, Lars-Erik Wernersson
(2006) Nano Letters, 6 p.1842-1846
Journal articleInAsP/InAs nanowire heterostructure field effect transistors
Erik Lind, Lars-Erik Wernersson
(2006) Device Research Conference , p.173-174
Conference paperVertical InAs nanowire wrap-gate FETs
Linus Fröberg, T Löwgren, Claes Thelander, Erik Lind, Tomas Bryllert, et al.
(2006) Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006)
Conference paperA combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
Lars-Erik Wernersson, S Kabeer, Vilma Zela, Erik Lind, J Zhang, et al.
(2005) IEEE Transactions on Nanotechnology, 4 p.594-598
Journal articleInAs epitaxial lateral overgrowth of W masks
Lars-Erik Wernersson, Erik Lind, J Lembke, B Martinsson, Werner Seifert
(2005) Journal of Crystal Growth, 280 p.81-86
Journal articleWrap-gated InAs nanowire field-effect transistor
Lars-Erik Wernersson, Tomas Bryllert, Erik Lind, Lars Samuelson
(2005) International Electron Devices Meeting 2005 , p.273-276
Conference paperMOVPE of InAs epitaxial overgrowth of W masks
Lars-Erik Wernersson, Erik Lind, Werner Seifert
(2005) Book of abstracts: 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)
Conference paperNanoelectronic pulse generators based on gated resonant tunnelling diodes
Lars-Erik Wernersson, Peter Lindström, André Nauen, Erik Lind
(2004) International Journal of Circuit Theory and Applications, 32 p.431-437
Journal articleResonant tunneling permeable base transistor based pulsed oscillator
Erik Lind, Peter Lindström, André Nauen, Lars-Erik Wernersson
(2004) Device Research Conference - Conference Digest, DRC , p.129-130
Conference paperResonant tunneling permeable base transistors with high transconductance
Erik Lind, Peter Lindström, Lars-Erik Wernersson
(2004) IEEE Electron Device Letters, 25 p.678-680
Journal articleSiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
Lars-Erik Wernersson, S Kabeer, V Zela, Erik Lind, J Zhang, et al.
(2004) Electronics Letters, 40 p.83-85
Journal articleResonant tunneling permeable base transistor based pulsed oscillator
Erik Lind, Peter Lindström, André Nauen, Lars-Erik Wernersson
(2004) Book of abstracts: Intl Semicond Dev Res Symp, (2004)
Conference paperDesign of resonant tunneling permeable base transistors
Peter Lindström, Erik Lind, Lars-Erik Wernersson
(2004) 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) , p.158-163
Conference paperHighly functional tunnelling devices integrated in 3D
Lars-Erik Wernersson, Erik Lind, Peter Lindström, Pietro Andreani
(2003) International Journal of Circuit Theory and Applications, 31 p.105-117
Journal articleTunneling spectroscopy of a quantum dot through a single impurity
Erik Lind, Boel Gustafson, I. Pietzonka, Lars-Erik Wernersson
(2003) Physical Review B (Condensed Matter and Materials Physics), 68 p.4-4
Journal articleResonant Tunneling Permeable Base Transistor for RF applications
Erik Lind, Peter Lindström, Lars-Erik Wernersson
(2003) 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741) , p.487-488
Conference paperRealization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
Erik Lind, Lars-Erik Wernersson, Ines Pietzonka, Werner Seifert
(2002) IEEE Transactions on Electron Devices, 49 p.1066-1069
Journal articleThree-dimensional integrated resonant tunneling transistor with multiple peaks
Erik Lind, Ines Pietzonka, Peter Lindström, Werner Seifert, Lars-Erik Wernersson
(2002) Applied Physics Letters, 81 p.1905-1907
Journal articleAttractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
Lars-Erik Wernersson, R Yamamoto, Y Miyamoto, Erik Lind, I Pietzonka, et al.
(2002) Institute of Physics Conference Series, 170 p.81-85
Journal articleA resonant tunneling permeable base transistor with Al-free tunneling barriers
Erik Lind, Peter Lindström, I. Pietzonka, Werner Seifert, Lars-Erik Wernersson
(2002) Device Research Conference (Cat. No.02TH8606) , p.155-156
Conference paperCircuits and devices with integrated VFETs and RTDs
Lars-Erik Wernersson, Erik Lind, Peter Lindström, Pietro Andreani
(2002) 2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353) , p.205-208
Conference paperStacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
Erik Lind, Peter Lindström, I. Pietzonka, Werner Seifert, Lars-Erik Wernersson
(2002) 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Conference paper