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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

Author

  • Jiongjiong Mo
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2014

Language

English

Pages

515-517

Publication/Series

IEEE Electron Device Letters

Volume

35

Issue

5

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • InGaAs MOSFET
  • source/drain engineering
  • voltage gain
  • oscillation
  • frequency

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106