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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Author

  • Karl-Magnus Persson
  • Martin Berg
  • Mattias Borg
  • Jun Wu
  • Sofia Johansson
  • Johannes Svensson
  • Kristofer Jansson
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

This paper presents DC and RF characterization as

well as modeling of vertical InAs nanowire MOSFETs with LG =

200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =

0.5 V show that high transconductance (gm = 1.37 mS/μm), high

drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =

287 Ωμm) can be realized using vertical InAs nanowires on Si

substrates. By measuring the 1/f-noise, the gate area normalized

gate voltage noise spectral density, SVG·LG·WG, is determined to

be lowered one order of magnitude compared to similar devices

with a high-κ film consisting of HfO2 only. Additionally, with a

virtual source model we are able to determine the intrinsic

transport properties. These devices (LG = 200 nm) show a high

injection velocity (vinj = 1.7·107 cm/s) with a performance

degradation for array FETs predominantly due to an increase in

series resistance.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year

2013

Language

English

Pages

2761-2767

Publication/Series

IEEE Transactions on Electron Devices

Volume

60

Issue

9

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • MOSFET
  • RF
  • InAs
  • Nanowire (NW)

Status

Published

Project

  • EIT_WWW Wireless with Wires

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0018-9383