RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
Summary, in English
a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias. An ON/OFF ρnw ratio of 10E−2 is obtained for the best device. Using the measured data, the quality factor is finally evaluated both for fabricated and ideal capacitors. The results agree well with simulated data.
- Department of Electrical and Information Technology
- Solid State Physics
IEEE Transactions on Electron Devices
IEEE - Institute of Electrical and Electronics Engineers Inc.
- Electrical Engineering, Electronic Engineering, Information Engineering
- trap density.
- quality factor
- Capacitance–voltage (C–V)
- EIT_WWW Wireless with Wires
- ISSN: 0018-9383