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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Tunneling-based devices and circuits

Author

  • Lars-Erik Wernersson
  • Mikael Egard
  • Mats Ärlelid
  • Erik Lind

Summary, in English

We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year

2010

Language

English

Pages

190-193

Publication/Series

2010 IEEE International Conference on IC Design and Technology (ICICDT)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

IEEE International Conference on IC Design and Technology (ICICDT)

Conference date

2010-06-04

Conference place

MINATEC, Grenoble, France

Status

Published

Project

  • EIT_HSWC:RFNano RF tranceivers and nano devices

Research group

  • Elektronikkonstruktion
  • Nano

ISBN/ISSN/Other

  • ISBN: 978-1-4244-5773-1