Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

Author

  • Aein Shiri Babadi
  • Erik Lind
  • Lars Erik Wernersson

Summary, in English

The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2016-03-28

Language

English

Publication/Series

Applied Physics Letters

Volume

108

Issue

13

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951