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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Effect of Gate Oxide Defects on Tunnel Transistor RF Performance


  • Markus Hellenbrand
  • Elvedin Memisevic
  • Johannes Svensson
  • Abinaya Krishnaraja
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.


  • Department of Electrical and Information Technology
  • Nano Electronics
  • NanoLund

Publishing year







2018 76th Device Research Conference (DRC)

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Nano Technology

Conference name

76th Device Research Conference

Conference date

2018-07-24 - 2018-07-27

Conference place

Santa Barbara, United States



Research group

  • Nano Electronics


  • ISBN: 978-1-5386-3028-0