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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High-Performance InAs Nanowire MOSFETs

Author

  • Anil Dey
  • Claes Thelander
  • Erik Lind
  • Kimberly Dick Thelander
  • Mattias Borg
  • Magnus Borgström
  • Peter Nilsson
  • Lars-Erik Wernersson

Summary, in English

In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2012

Language

English

Pages

791-793

Publication/Series

IEEE Electron Device Letters

Volume

33

Issue

6

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106