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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode

Author

  • Jie Sun
  • Erik Lind
  • Ivan Maximov
  • Hongqi Xu

Summary, in English

This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2011

Language

English

Pages

131-133

Publication/Series

IEEE Electron Device Letters

Volume

32

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • High-kappa HfO2
  • InP/InGaAs
  • memcapacitors
  • memristors
  • nanoelectronics

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0741-3106