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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Record performance for junctionless transistors in InGaAs MOSFETs


  • Cezar B. Zota
  • Mattias Borg
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

We demonstrate junctionless tri-gate MOSFETs utilizing a single layer 7 nm thick In0.80Ga0.20As (ND ∼ 1×1019 cm-3) as both channel and contacts. Devices with source and drain metal separation of 32 nm and Lg of 25 nm exhibit SS = 76 mV/dec., both the highest reported gm = 1.6 mS/μα and Ion = 160 μA/μm (VDD = 0.5 V, IOFF = 100 nA/μm) for a junctionless transistor. We also examine the influence of the contact thickness, comparing double-layer junctionless devices with 37 nm thick contacts with single-layer 7 nm contact devices.


  • Nano Electronics

Publishing year







2017 Symposium on VLSI Technology, VLSI Technology 2017

Document type

Conference paper


Institute of Electrical and Electronics Engineers Inc.


  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

37th Symposium on VLSI Technology, VLSI Technology 2017

Conference date

2017-06-05 - 2017-06-08

Conference place

Kyoto, Japan



Research group

  • Nano Electronics


  • ISBN: 9784863486058