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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Optimization of Near-Surface Quantum Well Processing

Author

  • Patrik Olausson
  • Lasse Södergren
  • Mattias Borg
  • Erik Lind

Summary, in English

Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

Department/s

  • Nano Electronics
  • NanoLund

Publishing year

2021-01-12

Language

English

Publication/Series

Physica Status Solidi (A) Applications and Materials Science

Volume

218

Issue

7

Document type

Journal article

Publisher

Wiley-Blackwell

Topic

  • Condensed Matter Physics
  • Nano Technology

Keywords

  • InGaAs
  • metalorganic vapor-phase epitaxy
  • metal–oxide–semiconductor field-effect transistors
  • mobility
  • quantum wells

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 1862-6300