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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

Author

  • Gvidas Astromskas
  • Kristian Storm
  • Philippe Caroff
  • Magnus Borgström
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV characteristics are measured at temperatures in the range between -140 and 40 degrees C and the CV characteristics for nanowires with different Sn and Se n-type doping levels are compared. The comparison of the data at various doping levels points towards large number of traps for highly doped samples, caused by the preferential dopant precursor incorporation at the nanowire surface. We also evaluate the frequency dispersion of the accumulation capacitance and determine values below 2% with weak temperature dependence, indicating the existence of border traps in these nanowire capacitors. (C) 2010 Elsevier B.V. All rights reserved.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2011

Language

English

Pages

444-447

Publication/Series

Microelectronic Engineering

Volume

88

Issue

4

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • III/V
  • Nanowire doping
  • Capacitance-voltage
  • InAs
  • Vertical wrap gate

Conference name

EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials

Conference date

2010-06-07 - 2010-06-11

Conference place

Strasbourg, France

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1873-5568
  • ISSN: 0167-9317