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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs


  • Anil Dey
  • Claes Thelander
  • Erik Lind
  • Magnus Borgström
  • Mattias Borg
  • Peter Nilsson
  • Lars-Erik Wernersson

Summary, in English

In this paper we present 15 nm InAs nanowire lateral

MOSFETs with an Ω-gate. The nanowires are grown from

size-selected Au-aerosols by means of metal-organic vapor

phase epixtaxy (MOVPE). In order to reduce the source and

drain resistances, n-type dopants were introduced in the bottom

and top parts of the nanowire forming a n-i-n structure. We

report experimental data for 15 nm InAs nanowire MOSFETs,

LG = 150 nm, with a normalized transconducatance gm =

0.7 S/mm (normalized to the circumference) and a current

density Je = 24 MA/cm, comparable to modern high electron

mobility transistors (HEMTs)


  • Department of Electrical and Information Technology
  • Solid State Physics
  • NanoLund

Publishing year




Document type

Conference paper


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics


  • high-performance
  • InAs
  • drive current
  • transconductance

Conference name

GigaHertz Symposium 2012

Conference date

2012-03-06 - 2012-03-07

Conference place

Frösundavik, Stockholm, Sweden