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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors

Author

  • Elvedin Memisevic
  • Johannes Svensson
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation at the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs.

Department/s

  • Nano Electronics
  • NanoLund

Publishing year

2018

Language

English

Publication/Series

Nanotechnology

Volume

29

Issue

43

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0957-4484