Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
Summary, in English
In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation at the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs.