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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

Author

  • Adam Jönsson
  • Johannes Svensson
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.

Department/s

  • Nano Electronics
  • NanoLund

Publishing year

2020-08-20

Language

English

Pages

4118-4122

Publication/Series

IEEE Transactions on Electron Devices

Volume

67

Issue

10

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Nano Technology

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0018-9383