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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers


  • Mikael Egard
  • Lars Ohlsson
  • B. Borg
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.


  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year





69th Device Research Conference, DRC 2011 - Conference Digest

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

69th Device Research Conference, DRC 2011

Conference date

2011-06-20 - 2011-06-22

Conference place

Santa Barbara, CA, United States




  • ISBN: 9781612842417