Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

Author

  • Mikael Egard
  • Lars Ohlsson
  • B. Borg
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year

2011-12-01

Language

English

Publication/Series

69th Device Research Conference, DRC 2011 - Conference Digest

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

69th Device Research Conference, DRC 2011

Conference date

2011-06-20 - 2011-06-22

Conference place

Santa Barbara, CA, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 9781612842417