Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
Summary, in English
III-V MOSFETs are currently being considered as a candidate for future high performance transistors . In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties . III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.
- Solid State Physics
- Department of Electrical and Information Technology
69th Device Research Conference, DRC 2011 - Conference Digest
IEEE - Institute of Electrical and Electronics Engineers Inc.
- Other Electrical Engineering, Electronic Engineering, Information Engineering
69th Device Research Conference, DRC 2011
2011-06-20 - 2011-06-22
Santa Barbara, CA, United States
- ISBN: 9781612842417