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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Author

  • Elvedin Memisevic
  • Erik Lind
  • Markus Hellenbrand
  • Johannes Svensson
  • Lars-Erik Wernersson

Summary, in English

We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire tunnel-field effect transistors with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter E0 of 43.5 mV although in most cases the S<<E0. The model explains the observed temperature dependence of the subthreshold swing.

Department/s

  • Nano Electronics
  • Department of Electrical and Information Technology

Publishing year

2017

Language

English

Pages

1661-1664

Publication/Series

IEEE Electron Device Letters

Document type

Journal article (letter)

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0741-3106