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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

A resonant tunneling permeable base transistor with Al-free tunneling barriers

Author

  • Erik Lind
  • Peter Lindström
  • I. Pietzonka
  • Werner Seifert
  • Lars-Erik Wernersson

Summary, in English

Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year

2002

Language

English

Pages

155-156

Publication/Series

Device Research Conference (Cat. No.02TH8606)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • GaAsP/GaAs/GaAsP heterostructure
  • 20 to 100 GHz
  • double barrier heterostructure
  • metal grating
  • lift-off
  • Al-free tunneling barriers
  • resonant tunneling permeable base transistor
  • RT-PBT
  • resonant tunneling PBT
  • three step fabrication process
  • MOVPE
  • W features
  • electron beam lithography
  • GaAsP-GaAs-GaAsP
  • W

Conference name

Device Research Conference, 2002

Conference date

2002-06-24 - 2002-06-26

Conference place

Santa Barbara, CA, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 0-7803-7317-0