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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V


  • E. Memisevic
  • J. Svensson
  • M. Hellenbrand
  • E. Lind
  • L. E. Wernersson

Summary, in English

We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.


  • Nano Electronics

Publishing year







2016 IEEE International Electron Devices Meeting, IEDM 2016

Document type

Conference paper


Institute of Electrical and Electronics Engineers Inc.


  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

62nd IEEE International Electron Devices Meeting, IEDM 2016

Conference date

2016-12-03 - 2016-12-07

Conference place

San Francisco, United States



Research group

  • Nano Electronics


  • ISBN: 9781509039012