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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Author

  • Cezar B. Zota
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2016-10-01

Language

English

Pages

1264-1267

Publication/Series

IEEE Electron Device Letters

Volume

37

Issue

10

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Communication Systems

Keywords

  • III-V
  • InGaAs
  • MOSFET
  • nanowire

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106