High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
Summary, in English
We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.
- Department of Electrical and Information Technology
IEEE Electron Device Letters
IEEE - Institute of Electrical and Electronics Engineers Inc.
- Communication Systems
- ISSN: 0741-3106