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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Author

  • Elvedin Memisevic
  • Johannes Svensson
  • Markus Hellenbrand
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.

Department/s

  • Department of Electrical and Information Technology
  • Nano Electronics
  • NanoLund

Publishing year

2016-05-05

Language

English

Pages

549-552

Publication/Series

IEEE Electron Device Letters

Volume

37

Issue

5

Document type

Journal article (letter)

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • HSQ
  • nanowire
  • III-V
  • TFET
  • transistor
  • InAs-GaSb

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0741-3106