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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Author

  • Henrik Nilsson
  • Philippe Caroff
  • Claes Thelander
  • Erik Lind
  • Olov Karlström
  • Lars-Erik Wernersson

Summary, in English

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • Mathematical Physics
  • NanoLund

Publishing year

2010

Language

English

Publication/Series

Applied Physics Letters

Volume

96

Issue

15

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • field effect transistors
  • nanowires

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0003-6951