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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs

Author

  • Sofia Johansson
  • Martin Berg
  • Karl-Magnus Persson
  • Erik Lind

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2013

Language

English

Pages

776-781

Publication/Series

IEEE Transactions on Electron Devices

Volume

60

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • transconductance
  • nanowire (NW)
  • metal–oxide–semiconductor field-effect transistor (MOSFET)
  • interface traps
  • high-$k$
  • frequency
  • border traps
  • InAs
  • InGaAs
  • Al2O3
  • HfO2

Status

Published

ISBN/ISSN/Other

  • ISSN: 0018-9383