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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Author

  • Sofia Johansson
  • Elvedin Memisevic
  • Lars-Erik Wernersson
  • Erik Lind

Summary, in English

We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz. The transistor has a transconductance of 730 mS/mm and is based on arrays of nanowires with gate-all-around and high-kappa gate dielectric. Furthermore, small-signal modeling shows a similar to 80% reduction of the total parasitic gate capacitance when the metal pad overlap in the transistors is reduced through additional patterning.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2014

Language

English

Pages

518-520

Publication/Series

IEEE Electron Device Letters

Volume

35

Issue

5

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Nanowire
  • III-V
  • MOSFET
  • RF
  • transistor
  • InAs

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106