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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Resonant Tunneling Permeable Base Transistor for RF applications


  • Erik Lind
  • Peter Lindström
  • Lars-Erik Wernersson

Summary, in English

A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature


  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year







2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics


  • molecular beam epitaxy
  • double barrier heterostructure
  • room temperature
  • semiconductor heterostructure
  • metallic elements
  • resonant tunneling permeable base transistor
  • tungsten
  • W
  • AlGaAs-InGaAs
  • 30 nm
  • 293 to 298 K
  • electron beam lithography

Conference name

2003 International Semiconductor Device Research Symposium

Conference date

2003-12-10 - 2003-12-12

Conference place

Washington, DC, United States




  • ISBN: 0-7803-8139-4