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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

Author

  • Olli Pekka Kilpi
  • Jun Wu
  • Johannes Svensson
  • Erik Lind
  • Lars Erik Wernersson

Summary, in English

We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and Ion=88 μA/μm at Ioff 1 nA/μm and Vd 0.5 V.

Department/s

  • Nano Electronics

Publishing year

2017-07-31

Language

English

Pages

36-37

Publication/Series

2017 Symposium on VLSI Technology, VLSI Technology 2017

Document type

Conference paper

Publisher

Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

37th Symposium on VLSI Technology, VLSI Technology 2017

Conference date

2017-06-05 - 2017-06-08

Conference place

Kyoto, Japan

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISBN: 9784863486058