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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

InGaAs tri-gate MOSFETs with record on-current


  • Cezar B. Zota
  • Fredrik Lindelow
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.


  • Nano Electronics

Publishing year







2016 IEEE International Electron Devices Meeting, IEDM 2016

Document type

Conference paper


Institute of Electrical and Electronics Engineers Inc.


  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

62nd IEEE International Electron Devices Meeting, IEDM 2016

Conference date

2016-12-03 - 2016-12-07

Conference place

San Francisco, United States



Research group

  • Nano Electronics


  • ISBN: 9781509039012