Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

InGaAs tri-gate MOSFETs with record on-current

Author

  • Cezar B. Zota
  • Fredrik Lindelow
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

Department/s

  • Nano Electronics

Publishing year

2017-01-31

Language

English

Pages

1-4

Publication/Series

2016 IEEE International Electron Devices Meeting, IEDM 2016

Document type

Conference paper

Publisher

Institute of Electrical and Electronics Engineers Inc.

Topic

  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

62nd IEEE International Electron Devices Meeting, IEDM 2016

Conference date

2016-12-03 - 2016-12-07

Conference place

San Francisco, United States

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISBN: 9781509039012