In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
- Department of Electrical and Information Technology
2014 72nd Annual Device Research Conference (DRC)
IEEE - Institute of Electrical and Electronics Engineers Inc.
- Electrical Engineering, Electronic Engineering, Information Engineering
72nd Annual Device Research Conference (DRC)
2014-06-22 - 2014-06-25
- ISSN: 1548-3770