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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Author

  • Anil Dey
  • Mattias Borg
  • Bahram Ganjipour
  • Martin Ek
  • Kimberly Dick Thelander
  • Erik Lind
  • Claes Thelander
  • Lars-Erik Wernersson

Summary, in English

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2013

Language

English

Pages

211-213

Publication/Series

IEEE Electron Device Letters

Volume

34

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Broken gap
  • GaSb
  • III–V
  • InAs
  • tunnel field-effect transistors (TFETs)

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0741-3106