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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v


  • Cezar B. Zota
  • Fredrik Lindelöw
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.


  • Department of Electrical and Information Technology
  • NanoLund

Publishing year





2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016

Document type

Conference paper


Institute of Electrical and Electronics Engineers Inc.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Nano Technology

Conference name

36th IEEE Symposium on VLSI Technology, VLSI Technology 2016

Conference date

2016-06-13 - 2016-06-16

Conference place

Honolulu, United States




  • ISBN: 9781509006373