InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
Summary, in English
We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.
- Department of Electrical and Information Technology
2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Institute of Electrical and Electronics Engineers Inc.
- Electrical Engineering, Electronic Engineering, Information Engineering
- Nano Technology
36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
2016-06-13 - 2016-06-16
Honolulu, United States
- ISBN: 9781509006373