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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements

Author

  • Erik Lind
  • Sofia Johansson

Summary, in English

We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution through measurements of the transconductance, find good agreement between the extracted and simulated transconductance.

Department/s

  • Solid State Physics

Publishing year

2013

Language

English

Pages

415-419

Publication/Series

ECS Transactions

Volume

52

Issue

1

Document type

Conference paper

Publisher

Electrochemical Society

Topic

  • Condensed Matter Physics

Conference name

China Semiconductor Technology International Conference (CSTIC)

Conference date

2013-03-17 - 2013-03-18

Conference place

Shanghai, China

Status

Published

ISBN/ISSN/Other

  • ISSN: 1938-6737
  • ISSN: 1938-5862