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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Author

  • Elvedin Memisevic
  • Johannes Svensson
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.

Department/s

  • Nano Electronics

Publishing year

2017-11

Language

English

Pages

4746-4751

Publication/Series

IEEE Transactions on Electron Devices

Volume

64

Issue

11

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0018-9383