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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Three-dimensional integrated resonant tunneling transistor with multiple peaks

Author

  • Erik Lind
  • Ines Pietzonka
  • Peter Lindström
  • Werner Seifert
  • Lars-Erik Wernersson

Summary, in English

A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year

2002

Language

English

Pages

1905-1907

Publication/Series

Applied Physics Letters

Volume

81

Issue

10

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951