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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain


  • Jiongjiong Mo
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g(m)/g(d) has been obtained with reduced output conductance g(d) and improved break-down voltage V-bd. For L-g=100nm, a high oscillation frequency f(max)= 270GHz has been obtained using an InP drain.


  • Department of Electrical and Information Technology
  • NanoLund

Publishing year





26th International Conference on Indium Phosphideand Related Materials (IPRM)

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

26th International Conference on Indium Phosphide and Related Materials (IPRM)

Conference date

2014-05-11 - 2014-05-15




  • ISSN: 1092-8669