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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Author

  • Rainer Timm
  • Martin Hjort
  • Alexander Fian
  • Claes Thelander
  • Erik Lind
  • Jesper N Andersen
  • Lars-Erik Wernersson
  • Anders Mikkelsen

Summary, in English

We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction

of the surface.

Department/s

  • Synchrotron Radiation Research
  • Department of Physics
  • NanoLund

Publishing year

2011

Language

English

Pages

1091-1094

Publication/Series

Microelectronic Engineering

Volume

88

Document type

Conference paper

Topic

  • Atom and Molecular Physics and Optics

Conference name

17th Conference on "Insulating Films on Semiconductors"

Conference date

2011-06-21 - 2011-06-24

Conference place

Grenoble, France

Status

Published

Research group

  • Nano